Sr# Bi-Polar Junction Transistor (BJT) Metal Oxide Field Effect Transistor (MOSFET) 1 It is a Bipolar Device It is majority carrier Device 2 Current control Device Voltage control Device. 3 Output is controlled by controlling base current Output is controlled by controlling gate voltage 4 Negative temperature coefficient Positive temperature coefficient 5 So, paralleling of BJT is difficult. So, paralleling of this device is easy. 6 Dive circuit is complex. It should provide Dive circuit is simple. It should provide 7 constant current (Base current) constant voltage (gate voltage) 8 Losses are low. Losses are higher than BJTs. 9 So used in high power applications. ...