Comparison between BJT and MOSFET

Sr#

Bi-Polar
Junction Transistor (BJT)

Metal Oxide Field
Effect Transistor (MOSFET)

1

It is a Bipolar Device

It is majority carrier
Device

2

Current control Device

Voltage control Device.

3

Output is controlled by
controlling base current

Output is controlled by
controlling gate voltage

4

Negative temperature
coefficient

Positive temperature
coefficient

5

So, paralleling of BJT is
difficult.

So, paralleling of this
device is easy.

6

Dive circuit is complex.
It should provide

Dive circuit is simple.
It should provide

7

constant current (Base
current)

constant voltage (gate
voltage)

8

Losses are low.

Losses are higher than
BJTs.

9

So used in high power
applications.

Used in low power
applications.

10

BJTs have high voltage
and current ratings.

They have less voltage
and current ratings.

11

Switching frequency is
lower than MOSFET.

Switching frequency is
high.